Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: SCT3040KL Series 1200 V 55 A 52 mOhm N-channel SiC power Mosfet - TO-247N91861+$147.537010+$143.688250+$140.7374100+$139.7111200+$138.9413500+$137.91501000+$137.27352000+$136.6320
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Category: Schottky diodeDescription: ROHM SCS220AEC Diode, silicon carbide Schottky, 650V series, single, 650 V, 20 A, 31 nC, TO-24776581+$53.993510+$50.8956100+$48.5942250+$48.2401500+$47.88611000+$47.48782500+$47.13375000+$46.9124
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Category: Diode arrayDescription: ROHM SCS230KE2C Diode, silicon carbide Schottky, barrier, 1200V series, dual common cathode, 1.2 kV, 30 A, 51 nC, TO-24757401+$69.364610+$66.3487100+$65.8058250+$65.3836500+$64.72011000+$64.41862500+$63.99635000+$63.6344
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Category: Power diodeDescription: Diode, silicon carbide Schottky, AEC-Q101 650V series, dual common cathode, 650 V, 30 A, 23 nC, TO-24726801+$43.397810+$40.9078100+$39.0581250+$38.7735500+$38.48891000+$38.16882500+$37.88425000+$37.7063
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Category: Schottky diodeDescription: ROHM SCS240KE2C Diode, silicon carbide Schottky, barrier, 1200V series, dual common cathode, 1.2 kV, 40 A, 66 nC, TO-24745201+$367.430810+$357.845650+$350.4970100+$347.9409200+$346.0239500+$343.46791000+$341.87042000+$340.2728
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Category: Diode arrayDescription: ROHM SCS220AE2C Diode, silicon carbide Schottky, barrier, 650V series, dual common cathode, 650 V, 20 A, 15 nC, TO-24723975+$22.761250+$21.7885200+$21.2438500+$21.10761000+$20.97142500+$20.81585000+$20.71857500+$20.6212
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Category: IGBTtransistorDescription: ROHM RGTH00TS65DGC11 Single transistor, IGBT, Field Cut off Channel, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 pins19531+$51.615810+$48.6542100+$46.4542250+$46.1157500+$45.77731000+$45.39652500+$45.05805000+$44.8465
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Category: Power diodeDescription: Diode - Universal, Power, Switch 600V Vrm 30A Io Recovery Diode19825+$22.432450+$21.4738200+$20.9369500+$20.80271000+$20.66852500+$20.51515000+$20.41927500+$20.3234
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Category: MOSpipeDescription: NCH 600V 20A POWER MOSFET75505+$23.188250+$22.1973200+$21.6423500+$21.50361000+$21.36492500+$21.20635000+$21.10727500+$21.0081
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Category: Diode arrayDescription: SCS120AE2 Series 600 V 10A flange mounted SiC Schottky barrier diode - TO-247-355121+$160.124910+$155.947750+$152.7452100+$151.6313200+$150.7958500+$149.68191000+$148.98572000+$148.2895
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Category: Power diodeDescription: Diode Switching 600V 30A 3Pin(3+Tab) TO-247 Bulk99995+$16.614050+$15.9040200+$15.5064500+$15.40701000+$15.30762500+$15.19405000+$15.12307500+$15.0520
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Category: MOSpipeDescription: ROHM SCT2450KEC Power Field Effect Transistor, MOSFET, N-channel, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V2350
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Category: MOSpipeDescription: ROHM SCT2280KEC Power Field Effect Transistor, MOSFET, N-channel, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V3711
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Category: IGBTtransistorDescription: ROHM RGTH60TS65DGC11 Single transistor, IGBT, Field Cut off Channel, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 pins7177
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Category: IGBTtransistorDescription: ROHM RGTH50TS65DGC11 Single transistor, IGBT, Field Cut off Channel, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 pins6362
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Category: IGBTtransistorDescription: ROHM RGT80TS65DGC11 Single transistor, IGBT, Field Cut off Channel, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 pins3971
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Category: Schottky diodeDescription: ROHM SCS220KE2C 二极管, 碳化硅肖特基, 屏障, 1200V系列, 双共阴极, 1.2 kV, 20 A, 34 nC, TO-2476224
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Category: IGBTtransistorDescription: ROHM RGT50TS65DGC11 单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚4703
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Category: IGBTtransistorDescription: ROHM RGTH80TS65DGC11 单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚5086
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Category: IGBTtransistorDescription: ROHM RGT40TS65DGC11 单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚5436
